Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1988-07-28

1989-06-20

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Flip-flop

365156, 365190, 3072721, 357 235, 357 41, G11C 1100, G11C 700, H03K 3284, H01L 2978

Patent

active

048414816

ABSTRACT:
An SRAM including a memory cell having a high-resistance load element. The load element is formed from a polysilicon film, and an impurity is introduced into a least a part of the polysilicon film for the purpose of increasing the threshold voltage of a parasitic MISFET formed using the load element as its channel region. Alternatively, the deposition of the polysilicon film is carried out at a relatively high temperature, thereby preventing any increase in the current flowing through the load element, and thus reducing the power dissipation in the SRAM.

REFERENCES:
patent: 4748487 (1988-05-01), Uchida et al.

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