Apparatus and method for maskless ion implantation

Details Apparatus and method for maskless ion implantation Apparatus and method for maskless ion implantation

1976-12-27

1978-02-14

Lieberman, Eli

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

148 15, H01J 3730, H01L 2172, H01L 21265

Patent

active

040741397

ABSTRACT:
A method and apparatus for implanting dopant material into a substrate of semiconductive material in a preselected pattern without utilizing a mask comprises the use of a source template which is formed of the desired dopant material in the configuration of the pattern to be implanted. Ions of the dopant material are sputtered from the template by bombardment with an ionized gas, and these dopant ions are then filtered from unwanted ion species and accelerated into the substrate while remaining in the original template pattern.

REFERENCES:
patent: 3500042 (1970-03-01), Castaing et al.
patent: 3866042 (1975-02-01), Vastel

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