Nonvolatile static memory circuit

Details Nonvolatile static memory circuit Nonvolatile static memory circuit

1998-05-27

2000-02-22

Nguyen, Tan T.

Static information storage and retrieval

Floating gate

365154, 36518507, 36518508, 365156, G11C 1600

Patent

active

06028787&

ABSTRACT:
A memory cell (400) for storing data on an integrated circuit. The memory cell (400) is static, nonvolatile, and reprogrammable. The layout of the memory cell is compact. In a first state, the logic output from this memory cell (400) is at about voltage level at a first conductor (505); and in a second state, the logic output is at about a voltage level at a second conductor (510). The memory cell (400) of the present invention includes a first programmable memory element (515) and a second programmable memory element (520). First programmable memory element (515) is coupled between the first conductor (505) and a sensing node (405). Second programmable memory element (520) is coupled between the sensing node (405) and the second conductor (510). In the first state, first programmable memory element (515) is not programmed, while the second programmable memory element (520) is programmed. In the second state, first programmable memory element (515) is programmed, while second programmable memory element (520) is not programmed.

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