Magnetic memory element having coupled magnetic layers forming c

Details Magnetic memory element having coupled magnetic layers forming c Magnetic memory element having coupled magnetic layers forming c

1998-04-27

2000-02-22

Nelms, David

Static information storage and retrieval

Systems using particular element

Magnetic thin film

365171, G11C 1115

Patent

active

060287861

ABSTRACT:
A magnetic memory element comprising a first magnetic layer magnetized in an orientation of magnetization along one in-plane direction, a second magnetic layer magnetized in an orientation of magnetization parallel or antiparallel to the orientation of magnetization of the first magnetic layer, the second magnetic layer having a higher coercive force than that of the first magnetic layer, a non-magnetic layer interposed between the first magnetic layer and the second magnetic layer, and a third magnetic layer for magnetically coupling the first magnetic layer with the second magnetic layer in order to form a closed magnetic circuit with the first magnetic layer and the second magnetic layer.

REFERENCES:
patent: 5173873 (1992-12-01), Wu et al.
patent: 5587943 (1996-12-01), Torok et al.
H. Sakakima, et al; "Solid State Memory Using GMR Films", J. Magn. Soc. Japan, vol. 20, No. 1, pp. 22-26 (1996) and Transl.

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