Method for pattern-wise etching of a metallic coating film

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156646, 156653, 156656, 156657, 1566591, 1566611, 204192E, 252 791, 430317, 430318, C23F 102, B44C 122, C03C 1500, C03C 2506

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044746423

ABSTRACT:
The invention provides an improved process for providing wirings and electrodes of aluminum film on the surface of a substrate. Instead of the conventional method of directly forming an organic resist layer on the metal film, a remarkable improvement in the fineness and accuracy of patterning is obtained by providing a subsidiary masking layer, mainly composed of silicon dioxide, between the metal film and the organic resist layer; and pattern-wise etching by first etching the subsidiary masking layer through a patterned mask of the organic resist layer with a fluorine-containing etching gas to form a patterned subsidiary masking layer, and then etching the metal film with a chlorine-containing etching gas through the mask of the patterned subsidiary masking layer, followed by final removal of the remaining subsidiary masking layer.

REFERENCES:
patent: 4184909 (1980-01-01), Chang et al.
patent: 4352724 (1982-10-01), Sugishima et al.

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