Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1996-11-27

2000-02-22

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257308, 257309, H01L 27108

Patent

active

060283343

ABSTRACT:
A semiconductor device in which at least one lower electrode is formed on an insulating film formed on a semiconductor substrate, and a capacitive insulating film and an upper electrode are formed on a surface of said lower electrode, thereby forming a capacitive element, wherein said lower electrode has side walls each formed integrally on a side surface thereof and consisting of a conductive film whose lower end portion extends from a bottom surface of said lower electrode to a semiconductor substrate side.

REFERENCES:
patent: 5338955 (1994-08-01), Tamura et al.
patent: 5441909 (1995-08-01), Kim
patent: 5443993 (1995-08-01), Park et al.
patent: 5449636 (1995-09-01), Park et al.
patent: 5656852 (1997-08-01), Nishioka et al.

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