Semiconductor device including nonvolatile memories

Details Semiconductor device including nonvolatile memories Semiconductor device including nonvolatile memories

1992-12-18

1994-07-19

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257325, 257326, 257365, 365182, 365184, H01L 2968, H01L 2978, G11C 1134

Patent

active

053311906

ABSTRACT:
The present invention provides nonvolatile semiconductor memory which has advantages permitting the cell of the memory circuit to integrate, the memory circuit to be easy to manufacture, and the manufacturing expense to be cut down. The nonvolatile memory (21) comprises a P type well for which a N+ type source (4) and a N+ type drain (3) is provided. A surface of a space between the source (4) and the drain (3) comprises a first portion (10a) and a second portion (10b). An insulating layer (6) for holding electrons spans the surface of the space. A memory gate electrode (5) is on the insulating layer (6) and spans the first portion (10a). The surface of the second portion (10b) and a part of the surface of the memory gate electrode (5) is covered with a first region electrode (24) attaching to the source (4). But the first region electrode (24) is insulated from the memory gate electrode (5) with the insulating layer (8).

REFERENCES:
patent: 4330850 (1982-05-01), Jacobs et al.

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