Static type random access memory device with stacked memory cell

Details Static type random access memory device with stacked memory cell Static type random access memory device with stacked memory cell

1992-03-27

1994-07-19

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257388, 257393, 257413, 257903, H01L 2711

Patent

active

053311701

ABSTRACT:
A static type random access memory cell comprises two n-channel type driver transistors formed in a major surface portion of a p-type silicon substrate, two n-channel type transfer transistors formed in the major surface portion of the p-type silicon substrate, and two p-channel type load transistors stacked over the n-channel type driver transistors, and heavily doped n-type polysilicon gate electrodes of the n-channel type driver transistors are electrically connected with p-type polysilicon gate electrodes of the p-channel type load transistors, respectively, wherein metal films are inserted between the n-type polysilicon gate electrodes and the p-type polysilicon gate electrodes so that any undesirable diode never take place therebetween.

REFERENCES:
patent: 4814841 (1989-03-01), Masuoka et al.
patent: 5194749 (1993-03-01), Meguro et al.
patent: 5210429 (1993-05-01), Adan

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