Pad definition to achieve highly reflective plate without affect

Details Pad definition to achieve highly reflective plate without affect Pad definition to achieve highly reflective plate without affect

1998-09-10

2000-02-22

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438612, 438617, 438618, 257737, H01L 214763

Patent

active

060279990

ABSTRACT:
A process for fabricating pixels and bonding pads wherein each has an optimal metal thickness in the fabrication of a LCD integrated circuit device is achieved. Semiconductor device structures are formed in and on a semiconductor substrate wherein the semiconductor device structures are covered by an insulating layer. A first metal layer is deposited overlying the insulating layer and patterned to form a metal line and a bonding pad. A dielectric layer is deposited overlying the metal line and the bonding pad. Vias are opened through the dielectric layer to the metal line but not to the bonding pad. A second metal layer is deposited overlying the dielectric layer and filling the via openings and etched back to form metal plugs. A third metal layer is deposited overlying the dielectric layer and metal plugs and patterned to form pixels contacting metal plugs. A passivation layer is deposited overlying the pixels. A via opening is etched through the passivation layer and the dielectric layer to the bonding pad. A wire bond is formed within the via opening to contact the bonding pad to complete the fabrication of the integrated circuit device.

REFERENCES:
patent: 5056895 (1991-10-01), Kahn
patent: 5537234 (1996-07-01), Williams et al.
patent: 5591480 (1997-01-01), Weisman et al.
patent: 5705424 (1998-01-01), Zavracky et al.

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