Negative-type resist composition and process for forming resist

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430325, G03C 1725

Patent

active

060278560

ABSTRACT:
A negative-type resist composition which is developable in a basic aqueous solution, which comprises a film-formable, basic aqueous solution-soluble polymer with an alkali-soluble group, a compound with an allyl alcohol structure and a photoacid generator which when decomposed by absorption of image-forming radiation causes the compound with an allyl alcohol structure to become a protecting group for the alkali-soluble group, as well as a resist pattern-forming process which employs it. A basic aqueous solution can be used as the developing solution, and it is possible to form intricate patterns with a practical sensitivity and no swelling.

REFERENCES:
patent: 5621019 (1997-04-01), Nakano et al.
Y. Kaimoto et al., Alicyclic Polymer for ArF and KrF Excimer Resist Based on Chemical Amplification, Advances in Resist Technology and Processing IX, SPIE vol. 1672, 1992, pp. 66-73.
S. Takechi et al., Alicyclic Polymer for ArF and KrF Excimer Resist Based on Chemical Amplification, Journal of Photopolymer Science and Technology, vol. 5, No. 3, 1992, pp. 439-446.
K. Maeda et al., Novel Alkaline-Soluble Alicyclic Polymer Poly(TCDMACOOH) for ArF Chemically Amplified Positive Resists, SPIE vol. 2724, Jun. 1996, pp. 377-385.
K. Nozaki et al., Molecular Design and Synthesis of 3-Oxocyclohexyl Methacrylate for ArF and KrF Exicimer Laser Resist, American Chemical Society, 1994, pp. 1492-1498.
M. Takahashi et al., Evaluation of chemically amplified resist based on adamantyl methacrylate for 193 nm lithography, SPIE vol. 2438, pp. 422-432.
K. Nozaki et al., A New Single-Layer Resist for 193-nm Lithography, Jpn. J. Appl. Phys., vol. 35, Part 2, No. 4B, Apr. 15, 1996.
S. Takechi et al., Impact of 2-Methyl-2-Adamantyl Group Used for 193-nm Single-Layer Resist, Journal of Photopolymer Science and Technology, vol. 9, No. 3, 1996, pp. 475-488.
K. Nozaka et al., A Novel Polymer For a 193-nm Resist, Journal of Photopolymer Science and Technology, vol. 9, No. 3, 1996, pp. 509-522.
K. Nozaki et al., New Protective Groups in Alicyclic Methacrylate Polymers for 193-nm Resists, Journal of Photopolymer Science and Technology, vol. 10, No. 4, 1997, pp. 545-550.
Y. Tsuchiya et al., Investigation of Acid-Catalyzed Insolubilization Reactions for Alicyclic Polymers with Carboxyl Groups, Journal of Photopolymer Science and Technology, vol. 10, No. 4, 1997, pp. 579-584.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Negative-type resist composition and process for forming resist does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Negative-type resist composition and process for forming resist , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Negative-type resist composition and process for forming resist will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-519154

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.