Source side injection non-volatile memory cell

Details Source side injection non-volatile memory cell Source side injection non-volatile memory cell

1992-12-14

1994-04-05

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257900, H01L 2968, H01L 2978

Patent

active

053008030

ABSTRACT:
A source side injection non-volatile memory cell is provided that comprises a floating gate and control gate stack (12) disposed outwardly from a channel region (26) formed on an (n-)-substrate (10). Drain region (32) and source region (30) are formed on opposite sides of stack structure (12). Source side injection of hot electrons occurs between source region (30) and floating gate (18) when relatively low voltages are placed on gate conductor (22).

REFERENCES:
patent: 4652897 (1985-07-01), Okuyama et al.
patent: 4972371 (1990-11-01), Komori et al.
patent: 5032881 (1991-07-01), Sardo et al.

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