Semiconductor memory

Static information storage and retrieval – Systems using particular element – Semiconductive

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Details

365185, 365218, G11C 1134

Patent

active

054327377

ABSTRACT:
In a semiconductor memory comprising first bit lines, second bit lines and first nonvolatile split gate memory cells and second nonvolatile split gate memory cells respectively having common source electrodes, memory gate electrodes connected to common memory gate lines, and drain electrodes connected, respectively, to the first bit lines and the second bit lines, a source voltage applying means applies a voltage VS different from a voltage applied to the substrate and meeting a relation represented by:

REFERENCES:
patent: 5021847 (1991-06-01), Eitan et al.
patent: 5274588 (1993-12-01), Manzur et al.
Takaai Nozaki et al.--A 1 Mb EEPROM with MONOS Memory Cell for Semiconductor Disk Application, IEEE Journal Solid-state Circuits, vol. 26, No. 4, Apr. 1991.

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