Semiconductor device with a multi-level gate structure and a gat

Details Semiconductor device with a multi-level gate structure and a gat Semiconductor device with a multi-level gate structure and a gat

1998-09-30

1999-12-21

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257406, 257405, 257409, 257410, H01L 2978

Patent

active

060052740

ABSTRACT:
The present invention is directed to a new semiconductor device and a method for making same. The semiconductor device is comprised of a gate dielectric layer, a conductor layer, and a metal oxide layer positioned between the gate dielectric layer and the conductor layer. The method comprises forming a gate dielectric layer, a conductor layer, and a metal oxide layer between the gate dielectric layer and the conductor layer.

REFERENCES:
patent: 5134451 (1992-07-01), Katoh
patent: 5292673 (1994-03-01), Shinriki et al.
patent: 5500380 (1996-03-01), Kim
patent: 5702979 (1997-12-01), Chan et al.

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