Semiconductor integrated circuit device with guardring regions t

Details Semiconductor integrated circuit device with guardring regions t Semiconductor integrated circuit device with guardring regions t

1990-10-12

1992-12-01

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257409, 257519, 257547, 257632, H01L 2702

Patent

active

051683407

ABSTRACT:
This invention relates to a semiconductor integrated circuit device wherein guardring regions are formed between a first element region and a second element region so as to surround the first element region, wherein gate electrodes are provided to cross the guardring regions, wherein the guardring regions are continuously formed even directly below the gate electrodes, and wherein an insulator film directly below the gate electrodes is relatively thick.

REFERENCES:
patent: 4063274 (1977-12-01), Dingwall
patent: 4240093 (1980-12-01), Dingwall
patent: 4273805 (1981-06-01), Dawson et al.
patent: 4295897 (1981-10-01), Tubbs et al.
patent: 4443811 (1984-04-01), Tubbs et al.
patent: 4490736 (1984-12-01), McElroy
patent: 4657602 (1987-04-01), Henderson, Sr.
patent: 4668973 (1987-05-01), Dawson et al.

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