Semiconductor device having salicide structure, method of manufa

Details Semiconductor device having salicide structure, method of manufa Semiconductor device having salicide structure, method of manufa

1990-11-26

1992-12-01

Wojciechowicz, Edward J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257627, 257900, H01L 2910

Patent

active

051683326

ABSTRACT:
A semiconductor device including a semiconductor substrate of a first conductivity type. An insulative film and metal films are sequentially formed on the main top surface of the semiconductor substrate. Impurity diffusion layers of a second conductivity type are selectively formed on the main top surface of the semiconductor substrate. The semiconductor device further includes metal compound layers consisting of constituting elements of the semiconductor substrate and a metal element. The metal compound layers are formed in the impurity diffusion layers in such a manner that they do not contact the insulative film, and the metal compound layers on the main back surface side of the semiconductor substrate have faces formed in parallel to the top surface of the semiconductor substrate.

REFERENCES:
patent: 4949136 (1990-08-01), Jain
"Transmission electron microscopy of the formation of nickel silicides", Philosophical Magazine A, 1982, vol. 45, No. 1, 35-47, H. Foll et al.
"Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi.sub.2 Expitial Structures" vol. 50, No. 6, Feb. 7, 1983, R. T. Tung et al.
"Comparison of Cobalt and Titanium Silicides for Salicide Process and Shallow Junction Formation", VMIC Conference, pp. 241-250, Jun. 12-13, 1989.
Tung et al., Physical Review Letters, vol. 50, No. 6, Feb. 7, 1983, pp. 429-432.

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