Process for forming both fixed and variable patterns on a single

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430 22, 430945, G03F 900, G03F 736, G03F 930

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057337110

ABSTRACT:
This invention is embodied in several variations of a process for independently forming both fixed and variable patterns within a single photoresist resin layer. In one application of the invention, both a fixed global alignment mark pattern and a variable identification mark pattern are formed in a single photoresist resin layer, and both patterns are transferred to an underlying substrate with a single etch step. Each pattern is formed independently of the other; the global alignment mark pattern by exposing the photoresist resin on a stepper device, and the identification mark pattern by either exposing or ablating the photoresist resin with a computer-controlled laser beam. Although this invention is described in the context of placing marks on a semiconductor wafer, the method is also applicable to other types of marks on other types of substrates.

REFERENCES:
patent: 5459340 (1995-10-01), Anderson et al.
T.D. Berker and S.E. Bernacki, "Dual-Polarity, Single-Resist Mixed (E-Beam/Photo)Lithography," IEEE Electron Device Letters, vol. EDL-2, No. 11, pp. 281-283, Nov. 1981.

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