Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1996-01-02
1998-03-31
Lesmes, George F.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430 22, 430945, G03F 900, G03F 736, G03F 930
Patent
active
057337110
ABSTRACT:
This invention is embodied in several variations of a process for independently forming both fixed and variable patterns within a single photoresist resin layer. In one application of the invention, both a fixed global alignment mark pattern and a variable identification mark pattern are formed in a single photoresist resin layer, and both patterns are transferred to an underlying substrate with a single etch step. Each pattern is formed independently of the other; the global alignment mark pattern by exposing the photoresist resin on a stepper device, and the identification mark pattern by either exposing or ablating the photoresist resin with a computer-controlled laser beam. Although this invention is described in the context of placing marks on a semiconductor wafer, the method is also applicable to other types of marks on other types of substrates.
REFERENCES:
patent: 5459340 (1995-10-01), Anderson et al.
T.D. Berker and S.E. Bernacki, "Dual-Polarity, Single-Resist Mixed (E-Beam/Photo)Lithography," IEEE Electron Device Letters, vol. EDL-2, No. 11, pp. 281-283, Nov. 1981.
Fox III Angus C.
Juska Cheryl
Lesmes George F.
Micro)n Technology, Inc.
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