Semiconductor device having sidewall insulating film

Details Semiconductor device having sidewall insulating film Semiconductor device having sidewall insulating film

1994-05-19

1995-07-11

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257900, 257336, 257345, 257623, H01L 2910, H01L 2978, H01L 2906

Patent

active

054323673

ABSTRACT:
A semiconductor device having a substrate, a conductive layer formed on the substrate, an upper insulting film formed on the upper surface of the conductive layer and having a sectional shape with its width reduced upwardly, and a sidewall insulating film formed on the sidewall of the conductive layer and the upper insulating film having a sectional shape with its width reduced upwardly. The shape of the upper insulating film and, particularly, the sidewall insulating film prevent a polycrystalline silicon film formed on the upper insulating film and the sidewall insulating film from having a surface in the vertical direction relative to the substrate. Consequently, the disconnection of an upper layer interconnection can be effectively prevented, and miniaturization of elements can be achieved without forming fence-shaped residue when a conductive layer formed on the sidewall insulating film is anisotropically etched by plasma etching.

REFERENCES:
patent: 4577391 (1986-03-01), Hsia et al.
patent: 4729002 (1988-03-01), Yamazaki
patent: 4745086 (1988-05-01), Parrillo et al.
patent: 4752589 (1988-06-01), Schaber
patent: 4786233 (1988-04-01), McDavid
patent: 4826781 (1989-05-01), Asahina et al.
patent: 4878100 (1989-10-01), McDavid
patent: 4998150 (1991-03-01), Rodder et al.
patent: 5170232 (1992-12-01), Narita
patent: 5173752 (1992-12-01), Motonami et al.
patent: 5177570 (1993-01-01), Tanaka
A Series of Manuscripts Prepared for "The 34th Intensive Study Seminar on Semiconductors" Jul. 28-31, 1990, pp. 103-142.

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