Method for forming an interconnect

Details Method for forming an interconnect Method for forming an interconnect

1996-06-26

1999-12-21

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438625, 438628, 438631, 438634, 438645, 438672, H01L 2128, H01L 2131

Patent

active

060048743

ABSTRACT:
The present invention describes a method for forming an interconnect to a region of an electronic device. The method comprises the steps of: forming a conductive material layer, wherein the conductive material layer fills an opening in a first dielectric layer and is disposed over the first dielectric layer; applying a patterning layer over the conductive material layer, wherein the patterning layer exposes a portion of the conductive material layer; etching the conductive material layer to remove the portion of the conductive material layer in order to provide an exposed conductive material structure that protrudes above the dielectric layer; forming a second dielectric layer; and planarizing the second dielectric layer to expose a portion of the exposed conductive material structure.

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Lee, et al., "A Process Technology For 1 Giga-Bit Dram", IEDM Tech. Dig, Dec. 1995, pp. 907-910.

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