Method for fabricating a film transistor

Details Method for fabricating a film transistor Method for fabricating a film transistor

1999-01-27

1999-12-21

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438163, 438164, H01L 21336, H01L 2184

Patent

active

060048360

ABSTRACT:
A method to form a TFT includes providing an insulating substrate. An amorphous silicon layer, a first polysilicon layer, an oxide layer, a second polysilicon layer are sequentially formed on the insulating substrate and are patterned to form an active region. On the active region, there are a desired gate region, and a desired interchangeable source/drain region. A portion of the second polysilicon, the oxide layer, the first polysilicon layer above the desired interchangeable source/drain region are removed, and a top portion of the amorphous-Si layer with a depth is also removed. The remaining portion of the a-Si layer is converted into a conductive layer through, for example, laser crystallization method so as to serve as the interchangeable source/drain region.

REFERENCES:
patent: 4399605 (1983-08-01), Dash et al.
patent: 5581102 (1996-12-01), Kusumoto
patent: 5693549 (1997-12-01), Kim

Affiliated with

Also associated with

Rating

Method for fabricating a film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating a film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-504338