Radiation sensitive material and method for forming pattern

Details Radiation sensitive material and method for forming pattern Radiation sensitive material and method for forming pattern

1997-12-29

1999-12-21

Baxter, Janet

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

G03C 1492

Patent

active

060047208

ABSTRACT:
A copolymer expressed by the following structural formula ##STR1## was obtained by loading adamantyl methacrylate monomer and t-butyl acrylate monomer by 1:1, then conducting polymerization, adding AIBN as a polymerization initiator, and then conducting precipitation purification with methanol. Then to the copolymer, triphenylsulfonium hexafluoroantimonate was added to prepare a cyclohexanone solution. This solution was applied to a wafer, and exposed to a KrF excimer stepper and developed. The threshold energy Eth was 50 mJ/cm.sup.2. A 0.45 .mu.m-wide L & S was formed at 130 mJ/cm.sup.2. The radiation sensitive material has good transparency and etching resistance, high sensitivity, and little peeling.

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Derwent Publication (Abstract), JP Patent No. JO4039665, Patentee: Fujitsu Ltd.

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