Process for etching tin oxide

Details Process for etching tin oxide Process for etching tin oxide

1986-11-07

1988-06-14

Niebling, John F.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

156643, 156646, 156653, 4271263, C23C 1434, B44C 122

Patent

active

047509805

ABSTRACT:
A composition for a plasma etch of tin oxide is disclosed that comprises a major proportion of chloroform gas and a minor proportion of a polymer suppressant gas such as boron trichloride or chlorine. A novel reactor is provided in connection with the etchant of the invention that has refractory components and a floating electrode designed to reduce polymer formation.

REFERENCES:
patent: 4380488 (1983-04-01), Reichelderfer et al.
patent: 4496419 (1985-01-01), Nulman et al.
patent: 4544444 (1985-10-01), Chang
patent: 4592800 (1986-06-01), Landau et al.
patent: 4613400 (1986-09-01), Tam et al.
patent: 4618398 (1986-10-01), Nawata et al.
patent: 4665008 (1987-05-01), Nishiura et al.

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