Method of forming a pattern using a phase shifting mask

Details Method of forming a pattern using a phase shifting mask Method of forming a pattern using a phase shifting mask

1993-10-08

1995-07-11

Chapman, Mark A.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

430 5, 430322, 430394, G03C 500

Patent

active

054320445

ABSTRACT:
A method of forming a pattern using a phase shift mask which comprises applying at least first and second exposures. At least one exposure is conducted by using a phase shifting mask and at least the other exposure is conducted for compensating the amount of light at a phase shifting boundary of the phase shifting mask, the pattern having an inter-pattern distance on a substrate of less than 2.4.times..lambda./NA.
The method of the present invention is applicable also to the formation of a pattern to which the existing phase shifting technique can not be applied, as well as to a pattern in which sub-patterns as the phase shifting portions can not be provided, whereby a pattern at a high resolution power can be obtained irrespective of the pattern shape.

REFERENCES:
patent: 4118230 (1978-10-01), Binder
patent: 5045417 (1991-09-01), Okamoto

Affiliated with

Also associated with

Rating

Method of forming a pattern using a phase shifting mask does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a pattern using a phase shifting mask, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a pattern using a phase shifting mask will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-502603