UPROM memory cell integrable with a tablecloth matrix EPROM

Details UPROM memory cell integrable with a tablecloth matrix EPROM UPROM memory cell integrable with a tablecloth matrix EPROM

1990-04-04

1991-11-05

Jackson, Jr., Jerome

357 231, 357 29, 357 55, 357 59, H01L 2968, H01L 2978, H01L 2701, H01L 2900

Patent

active

050634240

ABSTRACT:
The UPROM memory cell comprises self-aligned lines of source and lines of drain obtained in a semiconductor substrate. It also comprises a strip of floating gate, a strip of dielectric and a strip of barrier polysilicon, each of these strips being provided with a respective pair of small lateral fins. The UPROM cell lastly comprises a control gate superimposed over and self-aligned with the floating gate.

REFERENCES:
patent: 4334347 (1982-06-01), Goldsmith et al.
patent: 4597060 (1986-06-01), Mitchell et al.
patent: 4613956 (1986-09-01), Paterson et al.
patent: 4717943 (1988-01-01), Wolf et al.
patent: 4758869 (1988-07-01), Eitan et al.
patent: 4758984 (1988-07-01), Yoshida et al.
patent: 4812885 (1989-03-01), Riemenschneider
patent: 4905062 (1990-02-01), Esquivel et al.

Affiliated with

Also associated with

Rating

UPROM memory cell integrable with a tablecloth matrix EPROM does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with UPROM memory cell integrable with a tablecloth matrix EPROM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and UPROM memory cell integrable with a tablecloth matrix EPROM will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-501813