Parallel read circuit for testing high density memories

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371 681, G01R 3128

Patent

active

050758926

ABSTRACT:
A parallel read circuit for testing high density memories is disclosed which reduces testing time by increasing the simultaneous testing data imputted. Individual data line sense amplifiers are arrayed in parallel with corresponding multiplexers to amplify respective data bits from respective output data lines for each of the plural cell array blocks; data line comparators are connected at a position downstream of the individual data line sense amplifiers to compare the amplified data from said sense amplifiers per each separate cell array block and form primarily compared data, these primarily compared data are sent to the pertinent one of the data buses and individual output buffers are connected at a position downstream of the data buses to buffer further the test output from the data line comparators during a test mode in order to locate the specific location of defective memory block.

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patent: 4768194 (1988-08-01), Fuchs
patent: 4833677 (1989-05-01), Jarwala et al.
patent: 4885748 (1989-12-01), Hoffmann et al.

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