Susceptor in chemical vapor deposition reactors

Details Susceptor in chemical vapor deposition reactors Susceptor in chemical vapor deposition reactors

1989-07-07

1993-09-07

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

Work support

219 1067, 422245, 156612, 373138, C30B 3500

Patent

active

052425010

ABSTRACT:
An improved chemical reactor of the type for depositing a layer of material epitaxially onto a wafer of single crystalline silicon is disclosed. The reactor has a susceptor for supporting each wafer in a cavity of the susceptor with the cavity being curvilinearly shaped. Cavities of a particular shape and dimensions is particularly effective in reducing dislocations in the deposited epitaxial layer.

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Van Nos Nostrand's Scientific Encyclopedia, 5th Edition (1976), 2 pages.
Robinson et al., "Low Dislocation Density R-F Heated Epitaxial Silicon", J. Electrochem. Soc. Sol. St. Sci. and Tech., vol. 129, No. 12, Dec. 1982, pp. 2858-2860.

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