Method of forming groove isolation in a semiconductor device

Details Method of forming groove isolation in a semiconductor device Method of forming groove isolation in a semiconductor device

1982-05-21

1983-08-02

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29571, 29576W, 29580, 156649, 156657, 1566591, 1566611, 156662, 156667, 156668, 357 49, H01L 21308

Patent

active

043964605

ABSTRACT:
After filling grooves with a filling material, this filling material is etched by the use of a double-layer film which is made of substances different from each other.
The side etching of the lower film of the double-layer film and the etching of the filling material are alternately performed in such a manner that each etching is carried out a plurality of number of times. Thus, the upper surface of the filling material contained in each groove can be flattened.

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patent: 4056413 (1977-11-01), Yoshimura
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patent: 4199384 (1980-04-01), Hsu
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patent: 4307180 (1981-12-01), Pogge
patent: 4333965 (1982-06-01), Chow et al.
Bartush et al., "Etch Back . . . Process" IBM Tech. Discl. Bull. vol. 23 No. 8 (1/81) pp. 3676-3677.
Burkhardt et al., "Process . . . Isolation" IBM Tech. Discl. Bull. vol. 22 No. 5 (10/79) pp. 1862-1863.

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