Method of peeling epilayers

Details Method of peeling epilayers Method of peeling epilayers

1981-12-21

1983-08-02

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG105, 427 86, C30B 3300

Patent

active

043964567

ABSTRACT:
A method is disclosed for peeling thin epitaxially grown crystalline layers (epilayers) from the substrates on which they have been grown. A thin layer of single-crystal is epitaxially grown on a substrate, where material at the interface of the epilayer and the substrate has a lower melting point temperature than does the epilayer. Heat is added to the lower melting point temperature material in order to liquify at least part of it. A voltage is applied between the epilayer and an adjacent structure in order to develop an electrical force on the epilayer to facilitate peeling of the epilayer away from the substrate.

REFERENCES:
patent: 3171813 (1965-03-01), Inove
patent: 3585088 (1971-06-01), Schwuttke et al.
patent: 4027053 (1977-05-01), Lesk
patent: 4303463 (1981-12-01), Cook
patent: 4308078 (1981-12-01), Cook
patent: 4345967 (1982-08-01), Cook

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