Magnetic thin film memory and recording/reproduction method ther

Static information storage and retrieval – Systems using particular element – Magnetic thin film

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365173, G11C 1114

Patent

active

054485150

ABSTRACT:
A magnetic thin film memory is provided including a plurality of magnetic thin film memory elements each adapted to record information on the basis of the direction of magnetization of a magnetic thin film thereof, the magnetic thin film memory elements being each composed of at least the magnetic thin film and a switching element. With such a constitution the magnetic thin film memory can be reduced in size while a sufficiently large signal can be obtained with a substantially improved SN ratio. A method for recording and reproduction information using the magnetic thin film memory is also provided. In another aspect, the present invention provides a magnetic thin film memory element including at least two kinds of magnetic layer, and a nonmagnetic layer which is interposed between the magnetic layers wherein the two kinds of magnetic layers are stacked so as to be coupled to each other by an exchange interaction through the nonmagnetic layer.

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patent: 5173873 (1992-12-01), Wu et al.
A. V. Pobm et al., "The Design of a One Magabit Non-Volatile M-R Memory Chip Using 1.5.times.5 .mu.m Cells", IEEE Transactions on Magnetics, vol. 24, No. 6, Nov. 1988, pp. 3117-3119.
I. W. Ranmuthu et al., "Reprogrammable Logic Array Using M-R Elements", IEEE Transactions on Magnetics, vol. 26, No. 5, Sep. 1990, pp. 2828-2830.
"Magnetic Thin Film Technology", Electrical Engineering Lectures, vol. 5, Maruzen Co., 1977, pp. 254-257.

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