Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1978-05-30
1980-04-15
Anagnos, Larry N.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307200B, 307304, 357 23, 357 41, H03K 1772, H03K 1716, H03K 1766, H01L 2978
Patent
active
041985800
ABSTRACT:
A MOSFET switching device, including first and second control terminals; a first MOSFET having its gate connected to the first control terminal; a second MOSFET having its gate connected to the second control terminal and its source and drain both connected to the source of the first MOSFET; and a third MOSFET having its gate connected to the second control terminal and its source and drain both connected to the drain of the first MOSFET. When complementary control signals are applied to the first and second control terminals, charge spikes occurring at the source and drain of the first MOSFET when the conduction state of the first MOSFET is changed are cancelled by charge spikes occurring simultaneously in the second and third MOSFET's.
REFERENCES:
patent: 3983414 (1976-09-01), Stafford et al.
patent: 4075509 (1978-02-01), Redfern
patent: 4081699 (1978-03-01), Hirt et al.
patent: 4130766 (1978-12-01), Patel et al.
Anagnos Larry N.
National Semiconductor Corporation
LandOfFree
MOSFET switching device with charge cancellation does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MOSFET switching device with charge cancellation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOSFET switching device with charge cancellation will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-477436