Method and apparatus for controlling plasma etching

Details Method and apparatus for controlling plasma etching Method and apparatus for controlling plasma etching

1979-01-26

1980-06-17

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156345, 328132, 356381, 356448, H01L 21306, H03K 518, H03K 520

Patent

active

042082404

ABSTRACT:
A method and apparatus are disclosed for controlling plasma etching processes in which a thin layer is etched away to expose a substrate. Coherent light is directed onto the surface being etched, so that the change in reflectivity of the surface upon exposure of the underlying substrate produces a detectable change in the characteristics of the light reflected. A derivative detector having a variable timer is provided to sample continuously the reflected light and provide a control signal in response to a predetermined change in the characteristics of the light reflected, which is used to terminate the plasma etch process before an overetch condition occurs. The method and apparatus of the invention will detect a desired end point of etching through insulation to an underlying metal substrate, through metal to an underlying insulation substrate, through one insulation type to an underlying substrate of another insulation type and through one metal to an underlying substrate of another metal.

REFERENCES:
patent: 3596190 (1971-07-01), Marshal
patent: 3711779 (1973-01-01), Allington
patent: 3808067 (1974-04-01), Brown
patent: 4135161 (1979-01-01), Torrieri
Price, "Etch and-Paint Detection," IBM Technical Disclosure Bull. vol. 15, No. 11 (4/73), pp. 3532-3533.
Dhaliwal et al, "Multiple Sensor . . . System," IBM Technical Disclosure Bull. vol. 17, No. 17 (12/74), p. 1946-1947.
Moritz, "Continuous . . . Layers," IBM Technical Disclosure Bull. vol. 19, No. 7 (12/76), pp. 2579-2580.

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