Method for forming an amorphous silicon programmable element

Details Method for forming an amorphous silicon programmable element Method for forming an amorphous silicon programmable element

1994-04-05

1995-09-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437922, 437228, 437101, 257530, 257 50, H01L 2170, H01L 2700

Patent

active

054478804

ABSTRACT:
A method for forming an amorphous silicon programable element which requires less than about one square micron of area. The method includes the steps of forming a bottom conductor, depositing an interlayer dielectric above the bottom conductor, forming a via in the interlayer dielectric, depositing an anti-fuse layer above the bottom conductor within the via, and chemical vapor depositing a conductive plug above the anti-fuse layer and within the via. The method may additionally include the step of chemical vapor depositing a top conductor above the conductive plug.

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