Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1998-12-07
2000-10-17
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257750, 257757, 257763, H01L 2348, H01L 2352, H01L 2900
Patent
active
06133636&
ABSTRACT:
Ta--Al--N is formed on a semiconductor device structure, such as a wiring line, to prevent interdiffusion between surrounding layers. The Ta--Al--N material serves as a diffusion between (i) two conductor layers, (ii) a semiconductor layer and a conductor layer, (iii) an insulator layer and a conductor layer, (iv) an insulator layer and a semiconductor layer, or (v) two semiconductor layers. Another use is to promote adhesion of adjacent layers, such as between (i) two conductor layers, (ii) a conductor layer and an insulator layer, (iii) a semiconductor layer and a conductor layer, or (iv) two semiconductor layers. The Ta--Al--N material also is used to form a contact or electrode. The Ta--Al--N material includes between 0.5% and 99.0% aluminum, between 0.5% and 99.0% tantalum, and between 0.5% and 99.0% nitrogen. The Ta--Al--N layer has a thickness between 50 angstroms and 6000 angstroms, and as part of a wiring line structure, has a thickness which is between 1% and 25% of the wiring line structure thickness.
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Akram Salman
Meikle Scott G.
Clark Jhihan B
Hardy David
Micro)n Technology, Inc.
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