MOS semiconductor device

Details MOS semiconductor device MOS semiconductor device

1999-07-14

2000-10-17

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257384, 257491, 257501, 257510, H01L 2976, H01L 2996

Patent

active

061336114

ABSTRACT:
In a CMOS circuit including a source diffusion layer and a well region which are at the same potential, a P.sup.+ -type source diffusion layer and an N.sup.+ -type substrate diffusion layer are formed in a portion corresponding to a source region in a surface area of an N-type well region. A source contact is formed on the source and substrate diffusion layers through a salicide layer to connect the diffusion layers to their upper wiring layer. Since, therefore, the source contact can be arranged closer to a P-type well region, the layout area can be reduced.

REFERENCES:
patent: 5099302 (1992-03-01), Pavlin
patent: 5239197 (1993-08-01), Yamamoto
patent: 5317180 (1994-05-01), Hutter et al.
patent: 5856695 (1999-01-01), Ito et al.
patent: 5880502 (1999-03-01), Lee et al.
patent: 5990535 (1999-11-01), Palara

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