Semiconductor device

Details Semiconductor device Semiconductor device

1998-05-22

2000-10-17

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257335, 257327, H01L 2976

Patent

active

061336076

ABSTRACT:
The present invention provides a semiconductor device having high-speed switching characteristics and high output characteristics. More specifically, the semiconductor device includes a second conductivity type drain layer having a low impurity concentration, for decreasing the efficiency of injecting holes, and a second conductivity type contact layer having a high impurity concentration, for avoiding an increase in contact resistance. With this structure, an increase in ON-state voltage can be avoided while improving the switching rate by the second conductivity type drain layer. That is, the present invention achieves high-speed switching characteristics and high output characteristics at the same time.

REFERENCES:
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patent: 5585651 (1996-12-01), Kitagawa et al.
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patent: 5729031 (1998-03-01), Uenishi
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patent: 5780887 (1998-07-01), Nakagawa et al.
Norio Yasuhara, et al., "SOI Layer Thickness and Buried Oxide Thickness Dependencies of High Voltage Lateral IGBT Switching Characteristics," Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, Makuhari, (1993), pp. 270-272.
Logic Drive Consideration for Trench-Gate IGBT by H. Takahashi et al 1997 IEEE--Feb. 1997, pp. 205-208.
A Safe Operating Area Model for SOI Lateral IGBTs by Tomoko Matsudai et al 1997 IEEE--Feb. 1997, pp. 41-44.
Multi-Channel SOI Lateral IGBTS with Large SOA by Hideyuki Funaki et al 1997 IEEE--Feb. 1997, pp. 33-36.

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