Semiconductor device having improved latch-up protection

Details Semiconductor device having improved latch-up protection Semiconductor device having improved latch-up protection

1996-01-31

1999-08-24

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257147, 257546, 257550, 257552, 257577, 257593, 438356, 438414, H01L 2972

Patent

active

059427833

ABSTRACT:
A semiconductor circuit includes a semiconductor layer having a surface and a monolithic output stage formed in the semiconductor layer. The monolithic output stage extends to the surface of the semiconductor layer and has a periphery within the semiconductor layer, an output terminal, and a supply terminal. A barrier well is formed in the semiconductor layer and adjacent to at least a portion of the periphery of the monolithic output stage. The barrier well extends to the surface of the semiconductor layer and has a first conductivity. A diode having first and second diode regions is disposed in the semiconductor layer. The first diode region is coupled to the supply terminal. The diode is operable to prevent current flow from the barrier well to the supply terminal when the voltage between the supply and output terminals has a first polarity.

REFERENCES:
patent: 4979001 (1990-12-01), Alter

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