Methods for preparing ruthenium oxide films

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...

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438778, 438781, 42725531, 4273722, C23L 1640

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active

061331597

ABSTRACT:
The present invention provides methods for the preparation of ruthenium oxide films from liquid ruthenium complexes of the formula (diene)Ru(CO).sub.3 wherein "diene" refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, fluorinated derivatives thereof, combinations thereof, or derivatives thereof additionally containing heteroatoms such as halide, Si, S, Se, P, As, N, or O.

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