Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-10-09
2000-10-17
Nelms, David
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438637, 438638, 438643, 438648, 438718, 438720, H01L 214763
Patent
active
061331457
ABSTRACT:
A process for fabricating an aluminum based interconnect structure, using a plasma treated photoresist shape as an etch mask, has been developed. The process features treating a photoresist shape, to be used as an etch mask during RIE patterning procedures, in a nitrogen containing plasma. The plasma nitrogen treated photoresist shape is eroded at a decreased rate, when compared to counterpart non-treated photoresist shapes, during the RIE procedure used to fabricate the aluminum based interconnect structure. The increased etch rate ratio, between layers used for the interconnect structure, and the plasma treated photoresist shape, allows thinner photoresist shapes to be used, and therefore allows narrower lines and spaces to be achieved.
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Ackerman Stephen B.
Berry Renee R.
Nelms David
Saile George O.
Taiwan Semiconductor Manufacturing Company
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