Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-06-28
2000-10-17
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438648, 438677, 438725, H01L 214763
Patent
active
061331430
ABSTRACT:
The invention provides a method of manufacturing a metal interconnect. A substrate having a metal line formed thereon is provided. An anti-reflection layer is formed on the metal line. A dielectric layer with a relatively low dielectric constant is formed over the substrate. A patterned photoresist layer is formed on the dielectric layer. The patterned photoresist layer has an opening exposing a portion of the dielectric layer. The portion of the dielectric layer exposed by the opening is removed to form a via hole. The patterned photoresist layer is removed by an O.sub.2 --H.sub.2 O--CF.sub.4 plasma. The pressure of the O.sub.2 --H.sub.2 O--CF.sub.4 plasma is about 800-1000 torr. A cleaning process is performed by a post-stripper rinse solution and de-ionized water without using an acetone solution. A barrier layer is formed over the substrate by chemical vapor deposition. A metal nucleation is performed for a long time by chemical vapor deposition to form metal nuclei on the barrier layer. A metal layer is formed to fill the via hole by chemical vapor deposition.
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Fujimura, et al., "Resist Stripping in an O2 + H2O plasma downstream," J. Vacuum Science & Technology B, vol. 9, No. 2, Pt. 1, Mar./Apr. 1991, pp. 357-361.
Fujimura et al., "Resist stripping in an O2 + H2O plasma downstream", J. Vacuum Science & Technology B, vol. 9, No. 2, Pt. 1, the abstract, Mar. 1991.
Ho Yueh-Feng
Hsieh Ching-Hsing
Lin Jy-Hwang
Yu Chia-Chieh
Quach T. N.
United Microelectronics Corp.
United Semiconductor Corp.
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