Photoelectric conversion device and method manufacturing same

Details Photoelectric conversion device and method manufacturing same Photoelectric conversion device and method manufacturing same

1997-07-09

2000-10-17

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Gettering of substrate

By layers which are coated, contacted, or diffused

438471, 438764, H01L 21322

Patent

active

061331198

ABSTRACT:
Catalytic elements such as Ni are intentionally combined with defects that remain inside of a semiconductor substrate or thin film so that the energy state of the defects comes to a stable state. In this state, a heat treatment is conducted in an atmosphere containing halogen element or XV element, and gettering is conducted in such a manner that the catalytic element is taken in an oxide film. The bonds which are divided by separating the catalytic element are recombined through a heat treatment, thereby being capable of improving crystalline property of the semiconductor substrate or thin film remarkably.

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