Fluorocarbon polymer layer deposition predominant pre-etch plasm

Details Fluorocarbon polymer layer deposition predominant pre-etch plasm Fluorocarbon polymer layer deposition predominant pre-etch plasm

1997-09-12

1999-08-24

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 67, 216 79, 438743, 438744, H01L 2100

Patent

active

059424460

ABSTRACT:
A method for forming a patterned silicon containing dielectric layer within a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate a silicon containing dielectric layer. There is then formed upon the silicon containing dielectric layer a hard mask layer, where the hard mask layer leaves exposed a portion of the silicon containing dielectric layer. There is then etched partially through a first plasma etch method the silicon containing dielectric layer to form a partially etched silicon containing dielectric layer. The first plasma etch method employs a first etchant gas composition comprising a first fluorocarbon etchant gas which predominantly forms a fluoropolymer layer upon at least the hard mask layer. Finally, there is then etched through a second plasma etch method the partially etched silicon containing dielectric layer to form a patterned silicon containing dielectric layer. The second plasma etch method employs a second etchant gas composition comprising a second fluoro etchant gas which predominantly etches the partially etched silicon containing dielectric layer in forming the patterned silicon containing dielectric layer.

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patent: 5854134 (1998-12-01), Lan et al.

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