Method for producing photovoltaic element

Details Method for producing photovoltaic element Method for producing photovoltaic element

1997-12-08

2000-10-17

Diamond, Alan

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

136246, 136252, 136259, 136256, 136261, 438 72, 20429807, 20429824, 257436, 257432, H01L 31052, H01L 3118, H01L 3120, C23C 1434

Patent

active

061325694

ABSTRACT:
The present invention is to provide a method for producing a photovoltaic element having a reflective layer with high reflectivity and with high reliability and thus showing high photoelectric conversion efficiency, and especially to provide a production method causing no change in the reflection characteristics of a deposited film, even in continuous production on a long substrate for a long period. The production method of a photovoltaic element of the present invention is a method for producing a photovoltaic element having a reflective layer and a semiconductor layer on a long substrate, comprising the steps of supplying an inert gas, hydrogen atoms, and oxygen atoms into a vacuum vessel housing the substrate and effecting sputtering by use of a target comprising aluminum, thereby forming the reflective layer on the substrate.

REFERENCES:
patent: 4419533 (1983-12-01), Czubatyj
patent: 4532372 (1985-07-01), Nath
Patent Abstracts of Japan, vol. 015, No. 083 (P-1171), Feb. 26, 1991 (JP 02-297737).
Patent Abstracts of Japan, vol. 012, No. 075 (C-480), Mar. 9, 1988 (JP 62-211377).
Patent Abstracts of Japan, vol. 010, No. 345 (C-386), Nov. 20, 1986 (JP 61-147870).

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