Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-02-06
1997-03-11
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257111, 257140, 257141, 257357, H01L 2362
Patent
active
056104251
ABSTRACT:
An Input/Output (I/O) circuit (11) for an integrated circuit including Electrostatic Discharge Protection (ESD) circuitry is disclosed. A Silicon Controlled Rectifier SCR (30) is triggered by a transistor (36) which is scaled to an output transistor (24) of the I/O circuit (11) to shunt an ESD event. The SCR (30) couples between a pad (12) and a power supply line V.sub.SS. The transistor (36) is disabled. The triggering mechanism is voltage breakdown of the transistor (36) due to an ESD event. The SCR protection mechanism is process independent since the triggering mechanism is formed similarly to the output transistor (24) and thus breaks-down similarly. Zener diodes (26-29) are coupled to gates of the I/O circuit (11) and between the power supply lines. A phosphorous doping less than 5.0 E18 per cubic centimeter is used to form the cathode of zener diodes (26-29).
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Mietus David F.
Quigley John H.
Bowers Courtney A.
Hoshizaki Gary W.
Jackson, Jr. Jerome
Motorola Inc.
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