Semiconductor integrated circuit device and method of manufactur

Details Semiconductor integrated circuit device and method of manufactur Semiconductor integrated circuit device and method of manufactur

1995-04-24

1997-03-11

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, H01L 29788, H01L 2976, H01L 2994, H01L 31062

Patent

active

056104200

ABSTRACT:
A plurality of memory cells have their sources and drains formed integrally with n.sup.+ -buried layers acting as first data lines in a semiconductor substrate. The n.sup.+ -buried layers are connected with second data lines through transfer MISFETs. These transfer MISFETs have their gates made of the same layer of polycrystalline silicon as that of the floating gates of memory cells are shunted at each predetermined number of bits by Al lines having a lower resistance than that of the polycrystalline silicon.

REFERENCES:
patent: 5235200 (1993-08-01), Komori et al.
patent: 5306935 (1994-04-01), Esquivel et al.

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