Semiconductor integrated circuit device with elements isolated b

Details Semiconductor integrated circuit device with elements isolated b Semiconductor integrated circuit device with elements isolated b

1995-03-15

1997-03-11

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257301, 257304, 257314, 257316, H01L 27108, H01L 2976, H01L 29788

Patent

active

056104197

ABSTRACT:
A plurality of trenches are formed in parallel at the main surface of a semiconductor substrate. Memory cells of a NAND type E.sup.2 PROM are formed in the semiconductor substrate at the bottoms of the trenches. Memory cells of the NAND type E.sup.2 PROM are also formed in the semiconductor substrate of each projecting portion between the trenches. The memory cells of the NAND type E.sup.2 PROM formed in the semiconductor substrate at the bottoms of the trenches are isolated from the memory cells of the NAND type E.sup.2 PROM formed in the semiconductor substrate of each projecting portion between the trenches by separating the former from the latter in the direction of depth of the trenches.

REFERENCES:
patent: 4959812 (1990-09-01), Momodomi et al.
patent: 4996669 (1991-02-01), Endoh et al.
patent: 5050125 (1991-09-01), Momodomi et al.
patent: 5088060 (1992-02-01), Endoh et al.
patent: 5386132 (1995-01-01), Wong
patent: 5488244 (1996-01-01), Quek et al.

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