Method for making interconnect structures for VLSI devices

Details Method for making interconnect structures for VLSI devices Method for making interconnect structures for VLSI devices

1989-01-05

1990-09-04

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156652, 156653, 156655, 156656, 156657, 437228, H01L 21308, H01L 21283

Patent

active

049542141

ABSTRACT:
In methods for making interconnect structures for semiconductor devices a layer of seed material is formed on a first substantially planar dielectric layer which covers the semiconductor devices at predetermined locations where interconnect conductor is desired, a second substantially planar dielectric insulating layer is formed over the first substantially planar dielectric insulating layer and the seed material, the second layer having openings extending therethrough at the predetermined locations to expose at least a portion of the seed material, and conductive material is selectively deposited on the exposed seed material to fill the openings. The seed material may be a material in the group consisting of aluminum alloys, refractory metals and metal silicides, or may be SiO.sub.2 selectively implanted with silicon ions. The insulating material may be SiO.sub.2. The conductive material used to fill the openings may be tungsten deposited by selective CVD or nickel deposited by selective electroless nickel plating. The steps of the methods may be repeated to form a multilevel interconnect structure. The methods are particularly suited to making interconnect structures for submicron devices.

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Gregory Smith, CVD Tungsten Contact Plugs by in Situ Deposition and Etchback, Jun. 25-26, 1985 V-MIC Conf.
Mehta et al, Blanket CVD Tungsten Interconnect for VLSI Devices, Jun. 9-10, 1986 V-MIC Conf.
Higelin et al, A Contact Filling Process with CVD-Tungsten for Multilevel Metallization Systems, Jun. 9-10, 1986 V-MIC Conf.
U.S. Application No. 199,489 Filed May 27, 1988 and co-pending Canadian Application No. 567,935 filed May 27, 1988.
Broadbent et al, "High-Density High-Reliability Tungsten Interconnection by Filled Interconnect Groove Metallization", IEEE Transactions on Electron Devices, vol. 35, No. 7, pp. 952-956, Jul. 1988.
U.S. Application No. 207,568 filed Jun. 16, 1988 and co-pending Canadian Application No. 569,516 filed Jun. 15, 1988.
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