Semiconductor substrate bias circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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3072961, 307304, H03K 3354, H01L 1900, H01L 2704, H01L 2994

Patent

active

050346253

ABSTRACT:
A semiconductor substrate bias circuit is disclosed which comprises: first and second substrate biasing means connected in parallel between the substrate and a ground node, for pumping the charges from said substrate to said ground node or in the reverse direction in order to bias said substrate; and a detecting means for selectively enabling said first and second substrate biasing means in accordance with the levels of the substrate bias voltage. The circuit of the present invention is capable of supplying adequate bias voltages depending on the various operating modes, reducing the standby current loss at a standby state, and is suitable for being installed on a VLSI semiconductor chip.

REFERENCES:
patent: 4336466 (1982-06-01), Sud et al.
patent: 4439692 (1984-03-01), Beekmans et al.
patent: 4794278 (1988-12-01), Vajdic

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