Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1989-10-05
1991-07-23
Miller, Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
3072961, 307304, H03K 3354, H01L 1900, H01L 2704, H01L 2994
Patent
active
050346253
ABSTRACT:
A semiconductor substrate bias circuit is disclosed which comprises: first and second substrate biasing means connected in parallel between the substrate and a ground node, for pumping the charges from said substrate to said ground node or in the reverse direction in order to bias said substrate; and a detecting means for selectively enabling said first and second substrate biasing means in accordance with the levels of the substrate bias voltage. The circuit of the present invention is capable of supplying adequate bias voltages depending on the various operating modes, reducing the standby current loss at a standby state, and is suitable for being installed on a VLSI semiconductor chip.
REFERENCES:
patent: 4336466 (1982-06-01), Sud et al.
patent: 4439692 (1984-03-01), Beekmans et al.
patent: 4794278 (1988-12-01), Vajdic
Choi Hoon
Min Dong-Sun
Bertelson David R.
Miller Stanley D.
Samsung Electronics Co,. Ltd.
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