Semiconductor device having a ferroelectric capacitor and...

Details Semiconductor device having a ferroelectric capacitor and... Semiconductor device having a ferroelectric capacitor and...

2009-09-03

2011-12-20

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27104

Reexamination Certificate

active

08080841

ABSTRACT:
A semiconductor device includes a semiconductor substrate, a plurality of transistors connected in series and including a transistor having first and second diffusion regions arranged in the semiconductor substrate. The device also includes an insulating film columnar body arranged above the semiconductor substrate, and having a side which is inclined to a top surface of the substrate by an inclination angle greater than 0 degrees and less than 90 degrees. The device includes a memory cell including a first electrode arranged on the side of the insulating film columnar body and connected to the first diffusion region via a first contact plug, a ferroelectric film arranged on the first electrode, and a second electrode arranged on the ferroelectric film, and connected to the second diffusion region via a second contact plug.

REFERENCES:
patent: 6756262 (2004-06-01), Nakamura et al.
patent: 2002-289797 (2002-10-01), None

Affiliated with

Also associated with

Rating

Semiconductor device having a ferroelectric capacitor and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a ferroelectric capacitor and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a ferroelectric capacitor and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4316737