Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-06-27
2011-12-13
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S765000, C257SE21009, C257SE21495, C257SE23020
Reexamination Certificate
active
08076780
ABSTRACT:
A semiconductor device is provided having a pad with an improved moisture blocking ability. The semiconductor device has: a circuit portion including a plurality of semiconductor elements formed on a semiconductor substrate; lamination of insulator covering the circuit portion, including a passivation film as an uppermost layer having openings; ferro-electric capacitors formed in the lamination of insulator; wiring structure formed in the lamination of insulator and connected to the semiconductor elements and the ferro-electric capacitors; pad electrodes connected to the wiring structure, formed in the lamination of insulator and exposed in the openings of the passivation film; a conductive pad protection film, including a Pd film, covering each pad electrode via the opening of the passivation film, and extending on the passivation film; and stud bump or bonding wire connected to the pad electrode via the conductive pad protection film.
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International Search Report of PCT/JP2005/023964, date of mailing Apr. 18, 2006.
Nagai Kouichi
Saigoh Kaoru
Fujitsu Semiconductor Limited
Ngo Ngan
Nguyen Dilinh
Westerman Hattori Daniels & Adrian LLP
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