Semiconductor device having image sensor

Details Semiconductor device having image sensor Semiconductor device having image sensor

2008-05-13

2011-12-27

Fahmy, Wael (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S435000, C257SE27113, C257SE31122, C438S069000

Reexamination Certificate

active

08084798

ABSTRACT:
A pixel area for generating an image signal corresponding to incident light is formed on a semiconductor substrate. A light-shielding layer is formed on the semiconductor substrate around the pixel area. The light-shielding layer has a slit near the pixel area and shields the incident light. A passivation film is formed in the pixel area, on the light-shielding layer, and in the slit. A coating layer is formed in the slit of the light-shielding layer and on the passivation film in the pixel area. Microlenses are formed on the coating layer in the pixel area.

REFERENCES:
patent: 6376872 (2002-04-01), Pai et al.
patent: 6891207 (2005-05-01), Pequignot et al.
patent: 2002/0024001 (2002-02-01), Hiyama et al.
patent: 2002/0051071 (2002-05-01), Itano et al.
patent: 2005/0208692 (2005-09-01), Lee
patent: 2006/0118698 (2006-06-01), Yu
patent: 2006/0292734 (2006-12-01), Kim
patent: 2008/0111159 (2008-05-01), Gambino et al.
patent: 2002-76322 (2002-03-01), None
U.S. Appl. No. 12/971,478 filed Dec. 17, 2010.

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