Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-03-16
2011-12-06
Li, Meiya (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S359000, C257S360000, C257S401000, C257SE23070, C257SE29120, C361S091500, C361S056000, C361S111000
Reexamination Certificate
active
08072030
ABSTRACT:
A semiconductor device, which is connected to a protected device and protects a protected device, includes a semiconductor layer provided on an insulating film; a plurality of source layers which is formed in the semiconductor layer and extends in a first direction; a plurality of drain layers which is formed in the semiconductor layer and extends along with the source layers; a plurality of body regions which is provided between the source layers and the drain layers in the semiconductor layer and extends in the first direction; and at least one body connecting part connecting the plurality of body regions, wherein a first width between the source layer and the drain layer at a first position is larger than a second width between the source layer and the drain layer at a second position, the second position is closer to the body connecting part than the first position.
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Kabushiki Kaisha Toshiba
Li Meiya
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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